Highly accurate temperature sensor employing mixed-signal components

ABSTRACT

A radio transceiver includes circuitry that enables received RF signals to be down-converted to baseband frequencies and baseband signals to be up-converted to RF signals prior to transmission without requiring conversion to an intermediate frequency. The circuitry includes a temperature sensing module that produces accurate voltage level readings that may be mapped into corresponding temperature values. A processor, among other actions, adjusts gain level settings based upon detected temperature values. One aspect of the present invention further includes repetitively inverting voltage signals across a pair of semiconductor devices being used as temperature sensors to remove a common mode signal to produce an actual temperature-voltage curve. In one embodiment of the invention, the circuitry further includes a pair of amplifiers to facilitate setting a slope of the voltage-temperature curve.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to and incorporates by reference U.S.Utility Application entitled, “Local Oscillator Frequency Correction ina Direct Conversion RF Transceiver” having a Ser. No. 10/255,378 and afiling date of Sep. 26, 2002, and U.S. Utility Application entitled, “ADirect Conversion RF Transceiver For Wireless Communications”, having aSer. No. 10/052,870 and a filing date of Jan. 18, 2002, and U.S. UtilityApplication entitled, “RF Variable Gain Amplifier With Fast Acting DCOffset Cancellation”, having a Ser. No. 10/274,655 and a filing date ofOct. 21, 2002.

BACKGROUND

1. Technical Field

This invention relates generally to communication systems and, moreparticularly, to Radio Frequency (RF) signal amplification withinwireless devices operating in wireless communication systems.

2. Related Art

Communication systems are known to support wireless and wire linedcommunications between wireless and/or wired communication devices. Suchcommunication systems range from national and/or international cellulartelephone systems to the Internet to point-to-point in-home wirelessnetworks. Each type of communication system is constructed, and henceoperates, in accordance with one or more communication standards. Forinstance, wireless communication systems may operate in accordance withone or more standards including, but not limited to, IEEE 802.11,Bluetooth, advanced mobile phone services (AMPS), digital AMPS, globalsystem for mobile communications (GSM), code division multiple access(CDMA), wireless application protocol (WAP), local multi-pointdistribution systems (LMDS), multi-channel-multi-point distributionsystems (MMDS), and/or variations thereof.

Depending on the type of wireless communication system, a wirelesscommunication device, such as a cellular telephone, two-way radio,personal digital assistant (PDA), personal computer (PC), laptopcomputer, home entertainment equipment, etc., communicates directly orindirectly with other wireless communication devices. For directcommunications (also known as point-to-point communications), theparticipating wireless communication devices tune their receivers andtransmitters to the same channel of the other parties (e.g., one of theplurality of radio frequency (RF) carriers of the wireless communicationsystem) and exchange information over that channel. For indirectwireless communications, each wireless communication device communicatesdirectly with an associated base station (e.g., for cellular services)and/or an associated access point (e.g., for an in-home or in-buildingwireless network) via an assigned channel. To complete a communicationconnection between the wireless communication devices, the associatedbase stations and/or associated access points communicate with eachother directly, via a system controller, via the public switchedtelephone network (PSTN), via the Internet, and/or via some other wirelined or wireless network.

Each wireless communication device includes a built-in radio transceiver(i.e., receiver and transmitter) or is coupled to an associated radiotransceiver (e.g., a station for in-home and/or in-building wirelesscommunication networks, RF modem, etc.) to participate in wirelesscommunications. As is known, the receiver receives RF signals, removesthe RF carrier frequency from the RF signals via one or moreintermediate frequency stages, and demodulates the signals in accordancewith a particular wireless communication standard to recapture thetransmitted data. The transmitter converts data into RF signals bymodulating the data in accordance with the particular wirelesscommunication standard and adds an RF carrier to the modulated data inone or more intermediate frequency stages to produce the RF signals.

As is also known, the receiver is coupled to the antenna and includes alow noise amplifier (LNA), zero or more intermediate frequency (IF)stages, a filtering stage, and a data recovery stage in many designs.The low noise amplifier receives an inbound RF signal via the antennaand amplifies it. The down converters mix the amplified RF signal withone or more local oscillations to convert the amplified RF signal into abaseband signal or an intermediate frequency signal. As used herein, theterm “low IF” refers to both baseband and low intermediate frequencysignals. A filtering stage filters the low IF signals to attenuateunwanted out of band signals to produce a filtered signal. The datarecovery stage recovers raw data from the filtered signal in accordancewith the particular wireless communication standard.

There is a need today for a wireless transceiver system that allows forfull integration of circuit designs that support high data rate andwideband communications. Stated differently, there is a need forwireless transceiver systems formed on an integrated circuit that havethe capability to convert between baseband and a specified RF band in asingle step to avoid the image rejection problems that are commonlyknown for IF approach. Thus, it is desirable to design direct conversionradio transceivers to allow a transceiver to be built on one integratedcircuit without any image problem.

As the demand increases for enhanced performance (e.g., reducedinterference and/or noise, improved quality of service, compliance withmultiple standards, increased broadband applications, etc.), smallersizes, lower power consumption, and reduced costs, engineers are facedwith a very difficult design challenge to develop such a wirelesscommunication device.

To minimize the size and number of discrete circuits within a device,there is a desire to incorporate power amplifiers into a single deviceon a radio transceiver integrated circuit or device. One problem withintegrating radio transceiver circuits with power amplifiers, however,is that the power amplifiers generate significant temperatures thataffect device reliability and/or operation. An additional need exists,therefore, for an integrated power amplifier within a transceiver devicethat addresses the various problems related to increased temperaturesgenerated by the power amplifier of an integrated circuit or device. Itis desirable to monitor the temperature of the power amplifier (PA) andto control the power level to prevent it from becoming overheated and,thus, reducing its reliability.

More generally, a temperature sensor is a common feature of complexmixed-signal integrated circuits. A temperature sensor is used tocompensate for the sensitivity to temperature of integrated circuits,such as, but not limited to, RF amplifiers and active filters. Aparticularly challenging problem of a temperature sensor is generatingan output that is accurate in absolute terms from part to part such thatno calibration of the sensor itself is required. Typically, the absoluteaccuracy of a sensor is limited by the stability of process parametersand by circuit imperfections, such as amplifier input offset originatingfrom device mismatch. There exists a need, therefore, for circuitry anda method therefor for providing more accurate temperature sensing.

SUMMARY OF THE INVENTION

The invention generally includes generating a PTAT(proportional-to-absolute-temperature) signal with high absoluteaccuracy without impairment from device mismatch using mixed-signalcircuitry (a combination of analog and digital hardware). When adifferent current is passed through the same diode, or likewise the samecurrent but a different diode area, there will be a difference incurrent density that can be measured as a difference in voltage. Thisdifference in voltage (ΔV_(D)) is equal to the quantity V_(T) times thenatural logarithm of the quotient of the current densities.${\Delta\quad V_{D}} = {{V_{T} \cdot \ln}\quad\left( \frac{I_{S1}}{I_{S2}} \right)}$

In the case of an integrated circuit where the same diode is used withdifferent currents or the same current is switched into differentdiodes, the second term becomes a constant and the value ΔV_(D) is equalto a constant times temperature (T). This result is a PTAT(proportional-to-absolute temperature) response.

While there are many ways of generating a PTAT signal in the prior art,including using an analog amplifier to measure the two voltage terms oftwo diodes at different current densities and performing subtraction andamplification to generate the PTAT, such methods result in error beingintroduced due to device mismatch. Thus, the present invention includescircuitry and a method that eliminates error from device mismatch. Themethod and circuitry according to the various embodiments of theproposed invention include a design that facilitates sampling singlediode voltage drops based on differing current levels, and feeding themeasured voltage drops into a data converter and, finally, performing atemperature computation with digital logic to perform temperature basedcompensation.

The immunity of the invention to device mismatch impairments providesfor a more robust and accurate temperature sensor. Furthermore, theoutput is more readily utilized in a digital signal processing system asthe output is already digitized.

In one embodiment of the invention, a voltage is measured at the cathodeof a forward-biased junction diode wherein the voltage level islogarithmically related to the current that passes through it. When adifferent current is passed through the same diode, or likewise the samecurrent but a different diode area, there will be a difference incurrent density that can be measured as a difference in voltage. Thisdifference in voltage (ΔV_(D)) is equal to the quantity V_(T) times thenatural logarithm of the quotient of the current densities.${\Delta\quad V_{D}} = {{V_{T} \cdot \ln}\quad\left( \frac{I_{S1}}{I_{S2}} \right)}$

In the case of an integrated circuit where the same diode is used withdifferent currents or the same current is switched into differentdiodes, the second term becomes a constant and the value ΔV_(D) is equalto a constant times temperature (T). This result is a PTAT(proportional-to-absolute temperature) response.

Previous temperature sensors using analog components are subject toerrors arising from device mismatch. For example, if a current densityratio of 16 is used to generate the two diodes' voltages, the resultingdifference voltage will be only 26 mV*ln(16) or about 72 mV. This is adifficult quantity to process with an analog amplifier where typicaloffsets may be on the order of 10-20 mV. The offset of the amplifierwill then present an error to the system that will vary from part topart and degrade the accuracy of the measurement irrecoverably. For thisreason, the offset of the amplifier is minimized at the potential costof complexity, die area, and power.

A discrete-time switched-capacitor amplifier can overcome offset issuesby sampling and canceling the offset in between sampling and amplifyingthe diode voltages. This method has proven to be suitable for highlyaccurate sensors but at the cost of considerable complexity.

The proposed solution here is to digitize the diode voltages with an ADC(analog-to-digital converter) and store the result. The ADC samples thediode voltages at two points in time with different current densities.Digital hardware can then process the difference voltage with arbitraryamplification to limits imposed by the accuracy of the A/D conversion.Since the same sampling mechanism is used, any offset is ideallycancelled in the subtraction operation. A change in current densitiescan be generated by either switching in additional diode area with asingular current source or additional current with a singular diode or acombination of both.

In one application, a radio frequency (RF) variable gain amplifier (VGA)includes a power amplifier in a direct conversion radio transceiver thatincludes a gain determination module that reduces an input gain level tothe power amplifier (PA) to reduce an output power level of the poweramplifier according to temperature indications. In one embodiment of theinvention, the gain determination module adjusts input gain levels tocompensate for power reduction that occurs as a result of increasedtemperatures so as to maintain a constant output power level. In anotherembodiment of the invention, or alternative, in another mode ofoperation of the invention, the gain determination module reduces theinput gain level to the power amplifier to prompt it to produce loweroutput power so as to cause it to reduce its operational temperatureand, therefore, to maintain highest reliability.

In one embodiment of the invention, a baseband processor includes thegain determination module and is coupled to receive the indication ofthe operating temperature from a temperature sensing module and theindication of the output power of the PA from a power sensing module,respectively. In one aspect of this embodiment of the invention, thebaseband processor receives an indication of a user selected mode ofoperation indicating whether the gain determination module is to adjustthe input gain level of the signal produced to the power amplifier tomaintain a constant output power level or to adjust the operatingtemperature to prevent the power amplifier from overheating.

The radio transceiver further includes a plurality of adjustable gainelements that are coupled to receive gain level inputs from the gaindetermination module to increase or decrease gain level outputsresponsive thereto. In one embodiment, the gain determination modulegenerates a signal that is produced to each of the plurality ofadjustable gain elements as a gain level input. In an alternateembodiment, the gain determination module generates a plurality of gainlevel inputs, one for each of the plurality of adjustable gain elements.

Finally, in an alternate embodiment of the invention, a plurality ofgain level determination modules is provided. More specifically, a firstgain level determination module is coupled to receive a temperatureindication from a temperature sensing module while a second gain leveldetermination module is coupled to receive a power level indication froma power level sensing module. Thus, in this embodiment, the first gainlevel determination module adjusts gain level inputs to the poweramplifier to compensate for temperature while the second gain leveldetermination module compensates for output power levels.

Each of the foregoing examples merely illustrates some applications forthe present invention. It is understood that the invention is notlimited to such embodiments. Other features and advantages of thepresent invention will become apparent from the following detaileddescription of the invention made with reference to the accompanyingdrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a functional schematic block diagram of a temperature sensorwith amplification prior to sampling;

FIG. 2 is a schematic block diagram illustrating a communication systemthat includes a plurality of base stations and access points, aplurality of wireless communication devices and a network hardwarecomponent according to one embodiment of the present invention;

FIG. 3 is a schematic block diagram illustrating a wirelesscommunication device that includes a host device and an associatedradio;

FIG. 4 is a functional block diagram of a radio frequency (RF)transceiver integrated circuit formed according to one embodiment of thepresent invention;

FIG. 5 is a functional schematic block diagram illustrating oneembodiment of the present invention;

FIG. 6 is a schematic block diagram of a temperature sensor moduleaccording to one aspect of the present invention;

FIG. 7 is a set of curves illustrating the relationship between aconstant current I_(O), temperature and a voltage drop across a diode;

FIG. 8 is a functional schematic block diagram illustrating oneembodiment of the present invention;

FIG. 9 is a functional schematic block diagram illustrating analternative embodiment of the present invention;

FIG. 10 is a functional schematic block diagram of a temperature sensoraccording to one embodiment of the present invention;

FIG. 11 is a flowchart illustrating a method according to one embodimentof the present invention;

FIG. 12 is a diagram illustrating operation of a temperature sensoraccording to one embodiment of the invention;

FIG. 13 is a functional schematic block diagram of a simulation modelthat exemplifies one aspect of the embodiments of the present invention;

FIG. 14 is a functional schematic block diagram of a circuit thatperforms common mode rejection for a temperature sensing circuitaccording to one embodiment of the present invention;

FIG. 15 is a flowchart that illustrates a method for removing a commonmode signal for a temperature sensor according to one embodiment of thepresent invention; and

FIG. 16 is a functional schematic diagram of a direct conversion radiotransceiver including a temperature sensor according to one embodimentof the present invention.

DETAILED DESCRIPTION

FIG. 1 is a functional schematic block diagram of a temperature sensorwith amplification prior to sampling. As may be seen, a plurality ofcurrent sources 2A and 2B produce a current into diodes 3A and 3B,respectively. Voltage drops across the anode of diodes 3A and 3B areproduced to plus (+) and minus (−) inputs of a comparator 4 whichproduces a difference of the voltage drops to an adder 5 which isfurther coupled to receive an offset signal. A sum of the offset signaland the difference of the voltage drops is then produced to an amplifier6. An amplified signal produced by amplifier 6 is then produced to ananalog-to-digital converter 7 which produces a digital value reflectinga temperature difference of diodes 3A and 3B. A baseband processor 8then produces temperature compensation to modify a specified device'soperational range based upon the digital value reflecting thetemperature difference (and therefore a temperature of the diode 3A or3B that is being used as a temperature sensor).

Generally, the circuit of FIG. 1 is adequate assuming that devices 3Aand 3B are matched. Typically, however, device mismatch from processerrors and deviations result in the currents or devices not beingperfectly matched thereby reducing the accuracy of the temperaturesensing. It is desirable, therefore, to provide a circuit and method formore accurate temperature sensing. For example, if a current densityratio of 16 is used to generate the two diodes' voltages, the resultingdifference voltage will be only 26 mV*ln(16) or about 72 mV. This is adifficult quantity to process with an analog amplifier where typicaloffsets may be on the order of 10-20 mV. The offset of the amplifierwill then present an error to the system that will vary from part topart and degrade the accuracy of the measurement irrecoverably. For thisreason, the offset of the amplifier is minimized at the potential costof complexity, die area, and power.

A discrete-time switched-capacitor amplifier can overcome offset issuesby sampling and canceling the offset in between sampling and amplifyingthe diode voltages. This method has proven to be suitable for highlyaccurate sensors but at the cost of considerable complexity.

FIG. 2 is a schematic block diagram illustrating a communication system10 that includes a plurality of base stations and access points 12-16, aplurality of wireless communication devices 18-32 and a network hardwarecomponent 34. Any one of the wireless communication devices may includean integrated temperature sensor formed according to an embodiment ofthe invention. The wireless plurality of communication devices 18-32 maybe laptop host computers 18 and 26, personal digital assistant hosts 20and 30, personal computer hosts 24 and 32 and/or cellular telephonehosts 22 and 28. The details of the wireless communication devices willbe described in greater detail with reference to FIG. 3.

The base stations or access points 12-16 are operably coupled to thenetwork hardware component 34 via local area network (LAN) connections36, 38 and 40. The network hardware component 34, which may be a router,switch, bridge, modem, system controller, etc., provides a wide areanetwork (WAN) connection 42 for the communication system 10. Each of theplurality of base stations or access points 12-16 has an associatedantenna or antenna array to communicate with the wireless communicationdevices in its area. Typically, the wireless communication devicesregister with a particular base station or access points 12-16 toreceive services from the communication system 10. For directconnections (i.e., point-to-point communications), wirelesscommunication devices communicate directly via an allocated channel.

Typically, base stations are used for cellular telephone systems andlike-type systems, while access points are used for in-home orin-building wireless networks. Regardless of the particular type ofcommunication system, each wireless communication device includes abuilt-in radio and/or is coupled to a radio. The radio may include ahighly linear amplifier and/or programmable multi-stage amplifier asdisclosed herein to enhance performance, reduce costs, reduce size,and/or enhance broadband applications.

FIG. 3 is a schematic block diagram illustrating a wirelesscommunication device that includes the host device 18-32 and anassociated radio 60. For cellular telephone hosts, the radio 60 is abuilt-in component. For personal digital assistant hosts, laptop hosts,and/or personal computer hosts, the radio 60 may be built-in or anexternally coupled component.

As illustrated, the host device 18-32 includes a processing module 50,memory 52, a radio interface 54, an input interface 58 and an outputinterface 56. The processing module 50 and memory 52 execute thecorresponding instructions that are typically done by the host device18-32. For example, for a cellular telephone host device, the processingmodule 50 performs the corresponding communication functions inaccordance with a particular cellular telephone standard.

The radio interface 54 allows data to be received from and sent to theradio 60. For data received from the radio 60 (e.g., inbound data), theradio interface 54 provides the data to the processing module 50 forfurther processing and/or routing to the output interface 56. The outputinterface 56 provides connectivity to an output display device, such asa display, monitor, speakers, etc., such that the received data may bedisplayed. The radio interface 54 also provides data from the processingmodule 50 to the radio 60. The processing module 50 may receive theoutbound data from an input device, such as a keyboard, keypad,microphone, etc., via the input interface 58 or generate the dataitself. For data received via the input interface 58, the processingmodule 50 may perform a corresponding host function on the data and/orroute it to the radio 60 via the radio interface 54.

Radio 60 includes a host interface 62, a digital receiver processingmodule 64, an analog-to-digital converter 66, a filtering/gain module68, a down-conversion module 70, a receiver filter module 71, a lownoise amplifier 72, a transceiver/receiver switch module 73, a localoscillation module 74, memory 75, a digital transmitter processingmodule 76, a digital-to-analog converter 78, a filtering/gain module 80,an up-conversion module 82, a power amplifier 84, a transceiver filtermodule 85, and an antenna 86. The antenna 86 may be a single antennathat is shared by the transmit and receive paths as regulated by thetransceiver/receiver switch module 73, or may include separate antennasfor the transmit path and receive path. The antenna implementation willdepend on the particular standard to which the wireless communicationdevice is compliant.

The digital receiver processing module 64 and the digital transmitterprocessing module 76, in combination with operational instructionsstored in memory 75, execute digital receiver functions and digitaltransceiver functions, respectively. The digital receiver functionsinclude, but are not limited to, digital intermediate frequency tobaseband conversion, demodulation, constellation demapping, decoding,and/or descrambling. The digital transceiver functions include, but arenot limited to, scrambling, encoding, constellation mapping, modulation,and/or digital baseband to IF conversion. The digital receiver andtransmitter processing modules 64 and 76 may be implemented using ashared processing device, individual processing devices, or a pluralityof processing devices. Such a processing device may be a microprocessor,micro-controller, digital signal processor, microcomputer, centralprocessing unit, field programmable gate array (FPGA), programmablelogic device, state machine, logic circuitry, analog circuitry, digitalcircuitry, and/or any device that manipulates signals (analog and/ordigital) based on operational instructions. The memory 75 may be asingle memory device or a plurality of memory devices. Such a memorydevice may be a read-only memory (ROM), random access memory (RAM),volatile memory, non-volatile memory, static memory, dynamic memory,flash memory, and/or any device that stores digital information. Notethat when the digital receiver processing module 64 and/or the digitaltransmitter processing module 76 implements one or more of its functionsvia a state machine, analog circuitry, digital circuitry, and/or logiccircuitry, the memory storing the corresponding operational instructionsis embedded with the circuitry comprising the state machine, analogcircuitry, digital circuitry, and/or logic circuitry. The memory 75stores, and the digital receiver processing module 64 and/or the digitaltransmitter processing module 76 executes, operational instructionscorresponding to at least some of the functions illustrated in FIG. 4,et. seq.

In operation, the radio 60 receives outbound data 94 from the hostdevice via the host interface 62. The host interface 62 routes theoutbound data 94 to the digital transmitter processing module 76, whichprocesses the outbound data 94 in accordance with a particular wirelesscommunication standard (e.g., IEEE 802.11a, IEEE 802.11b, Bluetooth,etc.) to produce digital transmission formatted data 96. The digitaltransmission formatted data 96 will be a digital baseband signal or adigital low IF signal, where the low IF signal typically will be in thefrequency range of one hundred kilohertz to a few megahertz.

The digital-to-analog converter 78 converts the digital transmissionformatted data 96 from the digital domain to the analog domain. Thefiltering/gain module 80 filters and/or adjusts the gain of the analogsignal prior to providing it to the up-conversion module 82. Theup-conversion module 82 directly converts the analog baseband or low IFsignal into an RF signal based on a transceiver local oscillation 83provided by local oscillation module 74. The power amplifier 84amplifies the RF signal to produce outbound RF signal 98, which isfiltered by the transceiver filter module 85. The antenna 86 transmitsthe outbound RF signal 98 to a targeted device, such as a base station,an access point and/or another wireless communication device.

The radio 60 also receives an inbound RF signal 88 via the antenna 86,which was transmitted by a base station, an access point, or anotherwireless communication device. The antenna 86 provides the inbound RFsignal 88 to the receiver filter module 71 via the transceiver/receiverswitch module 73, where the receiver filter module 71 bandpass filtersthe inbound RF signal 88. The receiver filter module 71 provides thefiltered RF signal to low noise amplifier 72, which amplifies inbound RFsignal 88 to produce an amplified inbound RF signal. The low noiseamplifier 72 provides the amplified inbound RF signal to thedown-conversion module 70, which directly converts the amplified inboundRF signal into an inbound low IF signal or baseband signal based on areceiver local oscillation 81 provided by local oscillation module 74.The down-conversion module 70 provides the inbound low IF signal orbaseband signal to the filtering/gain module 68. The filtering/gainmodule 68 may be implemented in accordance with the teachings of thepresent invention to filter and/or attenuate the inbound low IF signalor the inbound baseband signal to produce a filtered inbound signal.

The analog-to-digital converter 66 converts the filtered inbound signalfrom the analog domain to the digital domain to produce digitalreception formatted data 90. The digital receiver processing module 64decodes, descrambles, demaps, and/or demodulates the digital receptionformatted data 90 to recapture inbound data 92 in accordance with theparticular wireless communication standard being implemented by radio60. The host interface 62 provides the recaptured inbound data 92 to thehost device 18-32 via the radio interface 54.

As one skilled in the art will appreciate, the wireless communicationdevice of FIG. 3 may be implemented using one or more integratedcircuits. For example, the host device may be implemented on oneintegrated circuit, the digital receiver processing module 64, thedigital transmitter processing module 76 and memory 75 may beimplemented on a second integrated circuit, and the remaining componentsof the radio 60, less the antenna 86, may be implemented on a thirdintegrated circuit. As an alternate example, the radio 60 may beimplemented on a single integrated circuit. As yet another example, theprocessing module 50 of the host device 18-32 and the digital receiverand transmitter processing modules 64 and 76 may be a common processingdevice implemented on a single integrated circuit. Further, memory 52and memory 75 may be implemented on a single integrated circuit and/oron the same integrated circuit as the common processing modules ofprocessing module 50 and the digital receiver and transmitter processingmodules 64 and 76.

FIG. 4 is a functional block diagram of a radio frequency (RF)transceiver integrated circuit formed according to one embodiment of thepresent invention. The RF transceiver includes a receiver section 104that is coupled to receive a local oscillation from a local oscillator108. The RF transceiver further includes a transmitter section showngenerally at 112 that also is coupled to receive a local oscillationfrom local oscillator 108. The RF transceiver also includes a basebandprocessor 116 that further includes a gain determination module 120.Gain determination module 120 is for determining and generating a gainlevel input that is provided to an adjustable gain element. Gaindetermination module 120 determines gain based upon at least one of adetected power level and a detected temperature. The detectedtemperature may be, for example, a temperature of a power amplifier.

Transmitter section 112 includes a power amplifier 124, a temperaturesensor module 128, an adjustable gain element module 132 and a powersensor module 136. In one embodiment of the invention, transmittersection 112 optionally includes a gain determination module 140, whilebaseband processor 116 does not include the gain determination module120. In yet another embodiment of the invention, both transmittersection 112 and baseband processor 116 include the gain determinationmodules 140 and 120, respectively. Additionally, any one of the powersensor module 136 or temperature sensor module 128 may be removed fromtransmitter section 112 and implemented as a separate circuit. In thisembodiment, gain determination module 120 would attempt to adjust thegain of the adjustable gain element module 132 according to the moduleinput received from transmitter section 112, while gain determinationmodule 140 would continue to determine a gain level for the adjustablegain element module 132 for the remaining temperature sensor module 128or power sensor module 136, respectively.

In operation, one of two modes may be selected. In a first mode, thetransmitter section 112 attempts to maintain a constant output powerlevel. Accordingly, power sensor module 136, in the embodiment of FIG.4, monitors an output power level of power amplifier 124 and generatespower level indications to gain determination module 140 (and in oneembodiment, also to the gain determination module 120). The gaindetermination module(s) 140 and/or 120 then generate gain level inputsignals to adjustable gain element module 132 to increase or decreaseits gain level output, thereby increasing or decreasing the output powerlevel of power amplifier 124. In a second mode of operation, thetransmitter section 112 does not attempt to maintain a constant outputpower level from power amplifier 124. Rather, it attempts to maintainthe transistor(s) of the power amplifier 124 in a reliable region ofoperation.

In the second mode of operation, temperature sensor module 128determines a temperature of power amplifier 124 and generates anindication of the detected temperature to the gain determination modules140 and/or 120. Gain determination modules 140 and/or 120 thereforegenerate gain level input to adjustable gain element module 132 toincrease or decrease the corresponding gain level output to increase ordecrease the output power level of the power amplifier 124. For example,if the temperature sensor module 128 indicates that the power amplifier124 is hot and has a temperature that exceeds a specified threshold,which specified threshold is selected to keep the transistor of thepower amplifier 124 within the reliable region, the gain determinationmodules 140 and/or 120 will generate gain level inputs to adjustablegain element module 132 to reduce its gain level output, therebyreducing the output power level of power amplifier 124 to reduce itsoperating temperature to keep the highest reliability.

FIG. 5 is a functional schematic block diagram illustrating oneembodiment of the present invention. A baseband processor 150 is coupledto produce outgoing baseband digital signals to a digital-to-analogconverter module 154 that converts the outgoing digital baseband signalsto outgoing (continuous waveform) baseband analog signals. The outgoingbaseband analog signals are produced from the digital-to-analogconverter module 154 to low pass filter 158. In the described embodimentof the invention, low pass filter 158 not only provides specifiedfiltering, but also provides amplification at a fixed gain level. In analternate embodiment of the invention, however, low pass filter 158provides the variable amplification level. Low pass filter 158 generatesfiltered signals to a first programmable gain amplifier 162.

Programmable gain amplifier 162 is coupled to receive the filteredsignals and to provide a specified amount of gain responsive to areceived gain level input. In the described embodiment of the invention,the received gain level input is generated by a gain determinationmodule 166 within baseband processor 150. In an alternate embodiment ofthe invention, the gain level input is generated by a gain determinationmodule 168 that is external to baseband processor 150. In yet anotherembodiment, both gain determination modules 168 and 166 generate gainlevel inputs that are jointly provided to some or all of the variablegain amplification devices. Programmable gain amplifier 162, responsiveto receiving one or more gain level inputs, provides an amplifiedbaseband signal to a mixer 170. Mixer 170 further is coupled to receivea local oscillation from a local oscillator 174 to up-convert theamplified baseband signal received from programmable gain amplifier 162.Mixer 170 produces a radio frequency signal that is produced to a secondprogrammable gain amplifier 178. Programmable gain amplifier 178 thenprovides a specified amount of amplification responsive to a receivedgain level input. As before, the received gain level input is generatedby gain determination module 166 within baseband processor 150 or bygain determination module 168. In one embodiment of the invention,programmable gain amplifiers 178 and 162 receive the same gain levelinput generated by gain determination modules 166 and 168. In analternate embodiment of the invention, gain determination modules 166and 168 generate separate gain level inputs for programmable gainamplifiers 162 and 178, respectively.

Programmable gain amplifier 178 then provides an amplified RF signal toa power amplifier 182. Power amplifier 182 then further amplifies theamplified RF signal received from programmable gain amplifier 178 to aspecified output power level. The output of power amplifier 182 is thenproduced to an antenna 183 where it is radiated outwardly.

A temperature sensor module 184 is placed proximate to power amplifier182 so that it is thermodynamically coupled to power amplifier 182.Accordingly, temperature sensor module 184 is able to monitor and detecta temperature of power amplifier 182 and to produce a temperatureindication to gain determination module 166 of baseband processor 150(or to gain determination module 168). An optional output power sensormodule 186 is coupled to detect an output power level of power amplifier182. Output power sensor module 186 generates an indication of theoutput power level of power amplifier 182 to gain determination module166. Gain determination module 166 is operable to determine and generategain level input signals to programmable gain amplifiers 162 and 178according to the received temperature indication and the received powerlevel indication.

In one embodiment of the invention, gain determination module 166generates the gain level inputs responsive to only one of either thetemperature indication or the power level indication, but not both.Baseband processor 150, in this embodiment, receives a gaindetermination mode input, as selected by a user, to determine whether itgenerates gain level inputs according to the temperature indication orthe power level indication. In an alternate embodiment of the invention,gain determination module 166 generates gain level inputs responsive toboth the temperature indication and the power level indication. In yetanother embodiment of the present invention, gain determination module166 includes computer instructions that are executed by basebandprocessor 150 to execute the logic for defining the gain level inputs.Accordingly, a user specifies whether the gain determination module 166(or gain determination module 168 in an alternate embodiment of theinvention) responds to temperature indications or power levelindications by downloading a corresponding set of computer instructionsto achieve the desired operation.

FIG. 6 is a schematic diagram illustrating one exemplary aspect of thepresent invention of a temperature sensor module 190. Temperature sensormodule 190 includes a constant current source 192 that produces acurrent I_(D). Current I_(D) generated by current source 192 is producedto the input of a diode 194. For room temperature operation, a constantcurrent I_(D) will generate a voltage drop across diode 194 equal toV_(D). As the temperature of diode 194 increases, however, the voltageacross diode 194 will decrease for a constant current I_(O).Accordingly, one aspect of the present invention includes determining achange in current to determine a corresponding temperature ortemperature change.

The current I_(D) that is generated by current source 192 and that isconducted through diode 194 may be expressed as:$I_{D} = {I_{S} \cdot {\mathbb{e}}^{\frac{V_{D}}{V_{T}}}}$

Thus, as may be seen, an inverse relationship exists between currentflow in the diode and temperature. In one embodiment of the invention, avoltage is measured at the cathode of a forward-biased junction diodethat is logarithmically related to the current that passes through it.When a different current is passed through the same diode, or likewisethe same current but a different diode area, there will be a differencein current density that can be measured as a difference in voltage. Thisdifference in voltage (ΔV_(D)) is equal to the quantity V_(T) times thenatural logarithm of the quotient of the current densities and may beexpressed as:${\Delta\quad V_{D}} = {{V_{T} \cdot \ln}\quad\left( \frac{I_{S1}}{I_{S2}} \right)}$

In the case of an integrated circuit where the same diode is used withdifferent currents or the same current is switched into differentdiodes, the second term becomes a constant and the value ΔV_(D) is equalto a constant times temperature (T). This result is a PTAT(proportional-to-absolute temperature) response. Thus, $\begin{matrix}{V_{D} = {{V_{T} \cdot \ln}\quad\left( \frac{I_{D}}{I_{S}} \right)}} \\{V_{T} = {\frac{k \cdot T}{q} = {\frac{26\quad m\quad V}{300K} \cdot T}}} \\{I_{S} = {A_{D}{{qn}_{i}^{2}\left( {\frac{D_{n}}{L_{n}N_{A}} + \frac{D_{p}}{L_{p}N_{D}}} \right)}}}\end{matrix}$

FIG. 7 is a set of curves illustrating the relationship between aconstant current I_(D), temperature and a voltage drop across a diode.More specifically, the set of temperature and voltage response curves200 of FIG. 7 show, for a constant current I_(O), that the voltage V_(D)drops according to the temperature T. Thus, for a temperature T₃, acorresponding voltage of V_(D3) is shown at 204. Similarly, a voltagedrop of V_(D2) is shown for an increased temperature T₂ (relative to T₃)at 208 and the voltage drop V_(D1) is shown for an increased temperatureT₁ (relative to T₂) at 212. As is further shown in FIG. 7, thetemperature T₁ is higher in magnitude than the temperatures T₂ and T₃.Similarly, the voltage drop V_(D3) is higher than the voltage dropsV_(D2) and V_(D1). Corresponding output power levels P_(OUT1), P_(OUT2)and P_(OUT3) are shown to correspond with voltage drops V_(D1), V_(D2)and V_(D3), respectively wherein P_(OUT3)>P_(OUT2)>P_(OUT1).

FIG. 8 is a functional schematic block diagram illustrating oneembodiment of the present invention. A baseband processor 250 providesoutgoing baseband digital signals to a digital-to-analog convertermodule 254 that converts the outgoing baseband digital signals tooutgoing baseband analog signals. The outgoing baseband analog signalsare provided to low pass filter 258. In the described embodiment of theinvention, low pass filter 258 not only provides specified filtering,but also provides amplification at a certain gain level. In an alternateembodiment of the invention, however, low pass filter 258 provides avariable amplification level. Low pass filter 258 generates filteredsignals to a first programmable gain amplifier (adjustable gain element)262. Programmable gain amplifier 262 is coupled to receive the filteredsignals and to provide a specified amount of gain responsive to areceived gain level input. In the described embodiment of the invention,the received gain level input is generated by a gain determinationmodule 266 within baseband processor 250.

Programmable gain amplifier 262 then provides amplified baseband signalsto a mixer 270. Mixer 270 further is coupled to receive a localoscillation from a local oscillator 274 to up-convert the amplifiedbaseband signals received from programmable gain amplifier 262. Mixer270 produces a radio frequency signal that is produced to a secondprogrammable gain amplifier 278. Programmable gain amplifier 278 thenprovides a specified amount of amplification responsive to a receivedgain level input. As previously mentioned, the received gain level inputis generated by gain determination module 266 within baseband processor250.

In one embodiment of the invention, programmable gain amplifiers 262 and278 receive the same gain level inputs generated by gain determinationmodule 266. In an alternate embodiment of the invention, gaindetermination module 266 generates separate gain level inputs for eachof the programmable gain amplifiers 262 and 278, respectively.Programmable gain amplifier 278 then provides an amplified RF signal toa power amplifier 282. Power amplifier 282 then amplifies the amplifiedRF signal received from programmable gain amplifier 278 to acorresponding output power level that is a function of the amplified RFsignal gain level produced by programmable gain amplifier 278. Theoutput of power amplifier 282 is then produced to an antenna 286 whereit is radiated outwardly.

A temperature sensor module 290 is placed proximate to power amplifier282 so that it is thermodynamically coupled to power amplifier 282.Accordingly, temperature sensor module 290 is able to monitor and detecta temperature of power amplifier 282 and to produce a temperatureindication to gain determination module 266 of baseband processor 250.Gain determination module 266 is operable to determine and generate gainlevel input signals to programmable gain amplifiers 262 and 278according to the received temperature indication. Baseband processor250, in this embodiment, receives a gain determination mode input, asselected by a user, to determine whether it generates gain level inputsaccording to the temperature indication or the power level indication.

In an alternate embodiment of the invention, gain determination module266 generates gain level inputs responsive to both the temperatureindication and the power level indication. In yet another embodiment ofthe present invention, gain determination module 266 includes computerinstructions that are executed by baseband processor 250 to execute thelogic for defining the gain level inputs. Accordingly, a user specifieswhether the gain determination module 266 responds to temperatureindications or power level indications by downloading a correspondingset of computer instructions to achieve the desired operation. As mayalso be seen, gain determination module 266 further generates aninternal gain level input to a digital amplifier formed within basebandprocessor 250.

FIG. 9 is a functional schematic block diagram illustrating analternative embodiment of the present invention. A gain determinationmodule 300 is coupled to receive an indication of a temperature from atemperature sensor module 304. A baseband processor 308 is coupled toproduce outgoing baseband digital signals to a digital-to-analogconverter module 312 that converts the outgoing baseband digital signalsto outgoing baseband analog (continuous waveform) signals. The outgoingbaseband analog signals are produced from digital-to-analog convertermodule 312 to low pass filter 316. In the described embodiment of theinvention, low pass filter 316 not only provides specified filtering,but also provides amplification at a fixed gain level.

In an alternate embodiment of the invention, however, low pass filter316 provides a variable gain level. Low pass filter 316 providesfiltered signals to a first programmable gain amplifier 320.Programmable gain amplifier 320 is coupled to receive the filteredsignals and to provide a specified amount of gain responsive to areceived gain level input received from gain determination module 300.

Programmable gain amplifier 320 then provides amplified baseband signalsto a mixer 324. Mixer 324 further is coupled to receive a localoscillation from a local oscillator (not shown in FIG. 9) to up-convertthe amplified baseband signals received from programmable gain amplifier320. Mixer 324 produces a radio frequency signal that is produced to asecond programmable gain amplifier 328. Programmable gain amplifier 328then provides a specified amount of amplification responsive to areceived gain level input.

Programmable gain amplifier 328 then generates an amplified RF signal toa power amplifier 332. Power amplifier 332 then amplifies the amplifiedRF signal received from programmable gain amplifier 328 to a specifiedoutput power level. The output of power amplifier 332 is then producedto an antenna 336 where it is radiated outwardly.

Temperature sensor module 304 is placed proximate to power amplifier 332so that it is thermodynamically coupled to power amplifier 332.Accordingly, temperature sensor module 304 is able to monitor and detecta temperature of power amplifier 332 and to produce a temperatureindication to gain determination module 300.

The embodiment as shown in FIG. 9 is similar to that of FIG. 8, withsome differences. Gain determination module 266 of the basebandprocessor of FIG. 8 has been replaced by a gain determination module 300that is formed in hardware external to the baseband processor.Accordingly, temperature sensor module 304 generates the temperatureindication and produces it to gain determination module 300. Gaindetermination module 300 then generates gain level inputs toprogrammable gain amplifiers 320 and 328. Additionally, in oneembodiment of the invention, gain determination module 300 generatesgain level inputs to baseband processor 308 to prompt an internaldigital amplifier to adjust its gain level output accordingly. In analternate embodiment of the invention, gain determination module 300further generates gain level inputs to low pass filter 316. Finally,gain determination module 300 generates gain level inputs that areproduced to baseband processor 308 to prompt it (or, more specifically,to prompt the digital amplifier there within) to increase or decreasethe digital gain of its outgoing digital baseband signals.

FIG. 10 is a functional schematic block diagram of a temperature sensoraccording to one embodiment of the present invention. The PTATtemperature sensor of FIG. 10 includes a plurality of current sources,shown here as current sources 350 and 354. While only two currentsources are shown, the embodiments of the present invention may readilyinclude more than two current sources. In the described embodiment ofthe invention, current source 354 produces eight times the current ofcurrent source 350. Stated differently, I_(D2)=8 I_(D1) in the describedembodiment of FIG. 10.

Current source 354 is coupled to a switch 358 that is selectively openedand closed by temporary test logic which, in the described embodiment,is formed within digital signal processor 362 by computer instructionsexecuted by digital signal processor 362. The temporary test logic mayalso be formed in hardware. Whenever switch 358 is closed, both currentsources 350 and 354 source current into node 366 and through diode 370.As described above, current through diode 370 is a function oftemperature. Thus, a voltage drop across the diode also is a function oftemperature. Thus, the voltage drop V_(D) is produced to a highresolution analog-to-digital converter (ADC) 374 from node 366. In thedescribed embodiment of the invention, ADC 374 is a 16-bit highresolution ADC to provide adequate resolution and voltage responserange. Thus, ADC 374 produces digitized diode voltage drops V_(D) todigital signal processor 362 where the digitized voltage values arestored. As will be described below, the voltage drops V_(D) are measuredfor current provided solely from current source 350 and from currentprovided by both current sources 350 and 354. Accordingly, because thevoltage drop V_(D) results from the same diode, offsets due tofabrication errors are avoided. The process of taking such measurementsis periodically repeated to facilitate detecting actual changes involtage due to temperature. Thus, temperature changes may accurately bedetected. In the described embodiment, diode 370 is a diode-configuredtransistor. Thus, the voltage across diode 370 is a voltage across thebase and the emitter if a bipolar junction transistor is utilized. Ageneric reference to this voltage is merely V_(D).

In operation, the ADC samples the diode voltages at two points in timewith different current densities. Digital hardware can then process thedifference voltage with arbitrary amplification to limits imposed by theaccuracy of the A/D conversion. Since the same sampling mechanism isused, any offset is ideally cancelled in the subtraction operation. Achange in current densities can be generated by either switching inadditional diode area with a singular current source or additionalcurrent with a singular diode or a combination of both.

FIG. 11 is a flowchart illustrating a method according to one embodimentof the present invention. The method of FIG. 11 may readily beunderstood if compared to the embodiment shown in FIG. 10. Initially,the method includes opening a switch that selectively couples anadditional current source and measuring a voltage drop across a diode orother semiconductor device having temperature sensitive operatingcharacteristics (step 380). Thereafter, the method includes convertingthe measured voltage to a digital value and storing the result in afirst memory register (step 382). Presuming linear relationship betweentemperature and current, a next step of the invention includesincreasing current while the device is operating at a temperature forthe first measurement. Thus, the next step is to close the switch forthe additional current source to increase the current and to measure thevoltage drop across a diode or semiconductor device (step 384) and toconvert the measured result to a digital value and to store the resultin a second memory register (step 386). Once the results are stored inthe first and second memory registers, the method according to thedescribed embodiment includes calculating a difference of the voltagevalues in the first and second memory registers and determining a PTATvalue (step 388). Thereafter, the method includes applying a gaindigitally based upon the PTAT value (step 390).

FIG. 12 is a diagram illustrating operation of a temperature sensoraccording to one embodiment of the invention. Referring to FIG. 12, atemperature curve 392 represents an actual temperature/voltage curve fora typical semiconductor device. Generally, a linear relationship existsbetween voltage and temperature, as illustrated by temperature curve392. Typically, however, offset voltages, differences in devicecharacteristics from device fabrication, and other influences, can shifta voltage/temperature curve in either horizontal direction, as shown inFIG. 12. In one described embodiment of the invention, a single deviceis used to measure temperature difference with a plurality of currentsources wherein at least one current source is switched in and out ofcoupling to make the temperature measurements. In that embodiment, anyoffset is carried through to the DSP (???) and is subtracted as thetemperature changes are determined. Further, because only one device isused as a temperature sensor, no offsets are introduced due to devicemismatch. Thus, a plotted temperature/voltage curve is not shifted dueto offset problems. That embodiment, however, requires a high resolutionanalog-to-digital converter.

An alternate embodiment of the invention includes a plurality of devicesthat are used for temperature detection but includes circuitry and amethod for removing offset shifts from a temperature/voltage curve.Referring again to FIG. 12, the method according to the alternateembodiment of the invention includes generating a temperature/voltagecurve with an opposite offset so as to produce an actualtemperature/voltage curve such as curve 392. As may further be seen,temperature/voltage curves 394 and 396 are shown with positive andnegative offsets are shown, respectively. As will be further explainedbelow, actual temperature curve 392 may be derived from evaluating thedifference in curves 394 and 396.

FIG. 13 is a functional schematic block diagram of a simulation modelthat exemplifies one aspect of the embodiments of the present invention.As may be seen, two current sources 400 and 402 are coupled to providecurrent through a plurality of switches, namely switches 404, 406, 408and 410. Switches 404 and 408 are operatively coupled to selectivelyopen and close switch connections therewithin based upon a first phasesignal ph1, while switches 406 and 410 are operatively coupled toselectively open and close switch connections there within based upon asecond phase signal ph2. Logic circuitry 412 produces ph1 and ph2 in amanner wherein ph1 and ph2 are logical opposites. One of average skillin the art may readily implement such logic. The circuit of FIG. 13further includes a voltage source 414 which represents, in a realcircuit, an offset voltage and is included herein to demonstrate thatthe inventive circuitry and method of an alternate embodiment of theinvention may be used to cancel erroneous temperature readings due tooffset voltages and device mismatch where two or more temperaturesensitive devices are used to indicate temperature or temperaturechanges. Generally, the simulation model of FIG. 13 represents oneembodiment of the present invention wherein voltage source 414 isreplaced by an introduced voltage offset. Similarly, switches 404-410may readily be replaced, for example, by semiconductor devices such asbi-polar junction transistors or MOSFETs, that are operably configuredand operated as switches. Thus, switches 404-410 may comprisessemiconductor devices that selectively couple two nodes with anappropriate bias voltage and decouple the two nodes when the biasvoltage is removed for normally open devices requiring a bias voltage tomake the connection. For normally closed devices, the logic is opposite.

As may further be seen, the circuit of FIG. 13 includes diodes 416 and418 that are used to detect temperature changes. Switches 406 and 408are coupled to provide current from current sources 402 and 400 to diode418, while switches 404 and 410 are coupled to provide current fromcurrent sources 402 and 400 to diode 416. When ph1 is logically assertedto close switches 404 and 408, diode 416 conducts current from currentsource 402 while diode 418 conducts current from current source 400.Conversely, when ph2 is asserted, diode 418 conducts current fromcurrent source 402 while diode 416 conducts current from current source400. In the described embodiment, a differential amplifier 420 iscoupled to detect a difference between the voltage drops across diodes416 and 418 and to amplify the detected difference and to produce theamplified output to a digital signal processor 422 that is coupled toreceive the amplified output of amplifier 420.

In the described embodiment, current source 402 produces eight times thecurrent density of current source 400. Accordingly, by measuring thevoltage drops across diodes 416 and 418, and by switching the currentmagnitudes as described herein, and by subtracting the voltage values,any offset introduced is subtracted leaving only voltage drops due tothe current through the diodes. Referring again to FIG. 12, if thetemperature-voltage curve 392 is shifted, for example, to temperaturecurve 394 due to offset voltage or device mismatch, the inversion of thevoltage drops across diodes 416 and 418 will result in temperature curve396 being generated for comparison to temperature-voltage curve 394 tofacilitate the accurate detection of voltage-temperature curve 392.Accordingly, as one or both of the diodes experience an increase intemperature (and therefore voltage drop) such increase may accurately bemeasured. Moreover, a voltage value used as an index by a digital signalprocessor to a mapping between voltage and temperature will be accuratethereby facilitating accurate temperature determination.

FIG. 14 is a functional schematic block diagram of a circuit thatperforms common mode rejection for a temperature sensing circuitaccording to one embodiment of the present invention. As may be seen,current sources 400 and 402 provide current for semiconductortemperature devices, namely, diodes 416 and 418, respectively. Thevoltage drops V_(D1) and V_(D2) across diodes 416 and 418 are producedto a cross connect block 450 that is further operatively coupled tocross connect inputs upon receiving a logically asserted swap signal.Without the logically asserted swap signal, the inputs are passedstraight through. Outputs of cross connect block 450 are then producedto a summing block 452 that determines a difference in the two inputs.The polarity of the output of the summing block 452, of course, willdepend on whether cross connect block 450 passed the voltage dropsstraight through or cross connected them. The outputs of summing block452 are then produced to an amplifier 454. The output is equal to eitherV_(D1)−V_(D2) or, alternatively, V_(D2)−V_(D1) and may be represented byΔV_(D). The output of amplifier 454, therefore, is equal to A₁ΔV_(D). Asmay further be seen, however, the output of amplifier 454 is furtherproduced to an inverter 456. Accordingly, the output of inverter 456 isequal to −A₁ΔV_(D). Both the outputs of amplifier 454 and inverter 456are then produced to a multiplexer that receives the same logicallyasserted swap signal that prompts cross connect block 450 to swap theinputs. Accordingly, the swap signal further results in either theoutput of amplifier 454 or inverter 456 being produced to a summingblock 460 and to a summing block 464. The output of multiplexer 458,therefore, is equal to either −A₁ΔV_(D) or +A₁ΔV_(D). Summing block 460,as may also be seen, is further coupled to receive V_(D1). As summingblock 460 is a positive summing block, rather than one that detects adifference as in the case of summing block 452, the output of summingblock 460 is equal to either V_(D1)+A₁ΔV_(D) or V_(D1)−A₁ΔVD. The outputof summing block 460 is then produced to an amplifier 462 whichtherefore produces an output of A₂V_(D1)+A₂A₁ΔVD or A₂V_(D1)−A₂A₁ΔV_(D).The output of amplifier 462 is produced to summing block 464 which againdetects a difference of the inputs. Accordingly, the output of summingblock 464 is equal to A₁ΔV_(D)−A₂(V_(D1)+A₁ΔV_(D)). As such, it may beseen that a common mode signal is subtracted, thereby producing avoltage value that is a function of a voltage drop across diodes 416 and418 to facilitate changes therein due to temperature changes.

Without the circuitry of FIG. 14, any downstream amplification wouldtypically amplify a common mode signal thereby rendering it difficult toaccurately detect and process small voltage changes due to temperaturechanges. Stated differently, an amplified common mode may easily takethe range of the sensor reading out of the range of a low orderanalog-to-digital converter. Accordingly, removing any common modesignal, including DC offsets, when the signal of interest is small,facilitates the use of a lower order analog-to-digital converter.

FIG. 15 is a flowchart that illustrates a method for removing a commonmode signal for a temperature sensor according to one embodiment of thepresent invention. Initially, a first current is conducted through afirst diode and a second current is conducted through a second diode(step 470). Thereafter, the embodiment of the inventive method includesdetermining a difference in voltage drops across the first and seconddiodes (step 472). Thereafter, the embodiment of the present inventionincludes selectively inverting the difference in the voltage dropsacross the first and second diodes (step 474). The selectively inverteddifference is then amplified (step 476). In relation to the circuit ofFIG. 14, a cross connect on the inputs of a summing block thatdetermines the difference in voltage drops is used to selectively invertthe output of the summing block. Since the summing block has positiveand negative inputs, inverting the inputs merely results in an inversionof the output signal value. In an alternate embodiment of the invention,a selective inverter may be placed on the output of the summing block inplace of the cross connect block on the input of the summing block. Forexample, as will be described below, a combination of a multiplexer andan inverting amplifier may be used to selectively invert the output ofthe summing block.

After the amplification step of step 476, the invention includesselectively inverting the amplified difference (step 478) and summingthe selectively inverted amplified difference with the first voltagedrop (step 480). The output of the sum of the selectively invertedamplified difference with the first voltage drop is then amplified (step482). Thereafter, the embodiment of the present invention includesdetermining a difference between the amplified sum and the selectivelyinverted difference to remove a common mode signal (step 484). Finally,one embodiment of the present invention includes setting gain levels forthe first and second amplifiers to adjust a slope and location of aninput voltage temperature curve (step 486). As may be seen, the abovedescribed method relates to, but does not strictly require, thecircuitry of FIG. 14. Generally, though, the method includes inverting asignal on a repetitive basis and summing the inverted signals so as toremove any common mode signal values.

FIG. 16 is a functional schematic diagram of a direct conversion radiotransceiver including a temperature sensor according to one embodimentof the present invention. Referring now to FIG. 16, a transceiver systemcomprises a single chip radio circuitry 504 that is coupled to basebandprocessing circuitry 508. The radio circuitry 504 performs filtering,amplification, frequency calibration (in part) and frequency conversion(down from the RF to baseband and up from baseband to the RF). Basebandprocessing circuitry 508 performs the traditional digital signalprocessing in addition to partially performing the automatic frequencycontrol. As may be seen, the single chip radio circuitry 504 is coupledto receive radio signals that are initially received by the transceiverand then converted by a Balun signal converter, which performs singleend to differential conversion for the receiver (and differential tosingle end conversion for the transceiver end). The Balun signalconverters are shown to be off-chip in FIG. 16, but they may be formedon-chip with radio circuitry 504 as well. Similarly, while the basebandprocessing circuitry 508 is shown off-chip, it also may be formedon-chip with radio circuitry 504.

Radio circuitry 504 and, more particularly, circuitry portion 504A,includes a low noise amplifier 512 that is coupled to receive RF signalsfrom a transceiver port. The low noise amplifier 512 then produces anamplified signal to mixers 516 that are for adjusting and mixing the RFwith a local oscillation signal. The outputs of the mixers 516 (I and Qcomponents of quadrature phase shift keyed signals) are then produced toa first HP-VGA 520. The outputs of the first HP-VGA 520 are thenproduced to a first RSSI 528, as well as to a low pass filter 524. Theoutputs of the low pass filter 524 are then produced to a second RSSI542, as well as to a second HP-VGA 536 and a third HP-VGA 540, as may beseen in FIG. 16. While not shown explicitly in FIG. 16, the temperaturesensors disclosed herein may be used in a plurality of circuit locationsto measure temperature effects. For example, it is often desirable todetect temperature changes for amplifier circuits including the poweramplifier, oscillation circuits (for example, to correct for I/Qmismatch), etc.

In operation, the first RSSI 528 measures the power level of the signaland interference. The second RSSI 542 measures the power level of thesignal only. The baseband processing circuitry 508 then determines theratio of the RSSI measured power levels to determine the relative gainlevel adjustments of the front and rear amplification stages. In thedescribed embodiment of the invention, if the power level of the signaland interference is approximately equal to or slightly greater than thepower level of the signal alone, then the first amplification stages areset to a high value and the second amplification stages are set to a lowvalue. Conversely, if the power level of the signal and interference issignificantly greater than the power of the signal alone, therebyindicating significant interference levels, the first amplificationstages are lowered and the second amplification stages are increasedproportionately.

Circuitry portion 504B includes low pass filters for filtering I and Qcomponent frequency correction signals and mixer circuitry for actuallyadjusting LO signal frequency. The operation of mixers and phase lockedloop for adjusting frequencies is known. Circuitry portion 504B furtherincludes JTAG (Joint Test Action Group, IEEE1149.1 boundary-scanstandard) serial interface (SIO) circuitry 544 for transmitting controlsignals and information to circuitry portion 504A (e.g., to controlamplification levels) and to a circuitry portion 504C (e.g., to controlor specify the desired frequency for the automatic frequency control).

A portion of the automatic frequency control circuitry that determinesthe difference in frequency between a specified center channel frequencyand an actual center channel frequency for a received RF signal isformed within the baseband circuitry in the described embodiment of theinvention. This portion of the circuitry includes circuitry thatcoarsely measures the frequency difference and then measures thefrequency difference in the digital domain to obtain a more precisemeasurement and to produce frequency correction inputs to circuitryportion 504B. Finally, radio circuitry portion 504C includes low passfiltration circuitry for removing any interference that is present afterbaseband processing, as well as amplification, mixer and up-convertercircuitry for preparing a baseband signal for transmission at the RF.

The direct conversion radio transceiver of FIG. 16 is provided toillustrate one embodiment of the invention of a direct conversion radiotransceiver. While not all of the disclosed and claimed circuit elementsare shown specifically in FIG. 16, it is understood that the variousembodiments of the invention disclosed herein may be implemented withina direct conversion radio transceiver as shown herein FIG. 16, amongother applications. For example, the disclosed and claimed circuitelements are coupled to and operate within a system similar to thatshown in FIGS. 3-5. As shown here in FIG. 16, the HP-VGAs 520 and/or 536and 540 are coupled to receive gain level control inputs from a gaindetermination circuit, as also illustrated in the embodiments of FIGS.5, 8 and 9, based upon a temperature sensor as illustrated in FIG. 10.

While the invention is susceptible to various modifications andalternative forms, specific embodiments thereof have been shown by wayof example in the drawings and detailed description. It should beunderstood, however, that the drawings and detailed description theretoare not intended to limit the invention to the particular formdisclosed, but, on the contrary, the invention is to cover allmodifications, equivalents and alternatives falling within the spiritand scope of the present invention as defined by the claims. As may beseen, the described embodiments may be modified in many different wayswithout departing from the scope or teachings of the invention. Forexample, references to operation of a digital signal processor also mayapply to baseband processors and vice-versa. Similarly, any combinationof the teachings herein may be modified to achieve similar but differentresults.

1. A direct conversion Radio Frequency (RF) transceiver integratedcircuit comprising: a local oscillator that generates an RF localoscillation signal corresponding to an RF channel; a receiver sectionoperably coupled to the local oscillator that receives an incoming RFsignal and down converts the incoming RF signal based upon the RF localoscillation signal to produce a baseband signal; a transmitter sectionoperably coupled to the local oscillator that receives an outgoingbaseband signal and up converts the outgoing baseband signal to producean outgoing RF signal; and wherein the transmitter section furthercomprises: a heat generating circuit; a temperature sensor that producesan indication of an operating temperature of the heat generatingcircuit; and at least one adjustable gain element operably having a gainsetting that is based upon the indication of the operating temperatureprovided by the temperature sensor.
 2. The direct conversion RFtransceiver of claim 1, wherein: wherein the temperature sensor isthermodynamically coupled to a power amplifier that produces anindication of a temperature of the power amplifier; and wherein the atleast one adjustable gain element adjusts its gain setting based uponthe indication of the temperature of the power amplifier.
 3. The directconversion RF transceiver of claim 2 wherein the temperature sensorfurther comprises first and second current sources operatively coupledto provide a current through a diode wherein at least one of the firstand second current sources is selectable.
 4. The direct conversion RFtransceiver of claim 3 further comprising a high resolutionanalog-to-digital converter coupled to detect a voltage drop across adiode for temperature sensing purposes, wherein the analog-to-digitalconverter produces digitized diode voltage values.
 5. The directconversion RF transceiver of claim 4 further including a digital signalprocessor including logic for determining a diode temperature based uponthe digitized diode voltage values.
 6. The direct conversion RFtransceiver of claim 5 wherein the digital signal processor furtherincludes a mapping of digitized voltage values to temperature values. 7.The direct conversion RF transceiver of claim 5 further includingtemperature test logic for selectively coupling the second currentsource in a first temperature detection mode and for selectivelydecoupling the second current source in a second temperature detectionmode.
 8. The direct conversion RF transceiver of claim 7 wherein thetemperature test logic is defined within the digital signal processor.9. The direct conversion RF transceiver of claim 8 wherein thetemperature test logic within the digital signal processor selectivelycouples the second current source to provide current to the diode toprovide temperature readings in a first temperature state.
 10. Thedirect conversion RF transceiver of claim 9 wherein the digital signalprocessor stores one of the digitized diode voltage values or thecorresponding temperature values in the first temperature state.
 11. Thedirect conversion RF transceiver of claim 10 wherein the digital signalprocessor stores one of the digitized diode voltage values or thecorresponding temperature values in a second temperature state whereinthe second current source is selectively decoupled to obtain voltagevalues in the second temperature state.
 12. A temperature sensor thatproduces an indication of an operating temperature of a heat generatingcircuit, comprising: a diode that is thermodynamically coupled to theheat generating circuit, wherein the diode produces a temperatureindication of a temperature of the heat generating circuit; and logicfor determining a temperature based upon the indication.
 13. Thetemperature sensor of claim 12 wherein the temperature sensor furthercomprises first and second current sources operatively coupled toprovide a current through a diode wherein at least one of the first andsecond current sources is selectable.
 14. The temperature sensor ofclaim 13 further comprising a high resolution analog-to-digitalconverter coupled to detect a voltage drop across a diode fortemperature sensing purposes, wherein the analog-to-digital converterproduces digitized diode voltage values.
 15. The temperature sensor ofclaim 14 further including a digital signal processor including logicfor determining a diode temperature based upon the digitized diodevoltage values.
 16. The temperature sensor of claim 15 wherein thedigital signal processor further includes a mapping of digitized voltagevalues to temperature values.
 17. The temperature sensor of claim 15further including temperature test logic for selectively coupling at thesecond current source in a first temperature detection mode and forselectively decoupling the second current source in a second temperaturedetection mode.
 18. The temperature sensor of claim 17 wherein thetemperature test logic is defined within the digital signal processor.19. The temperature sensor of claim 18 wherein the temperature testlogic within the digital signal processor selectively couples the secondcurrent source to provide current to the diode to provide temperaturereadings in a first temperature state.
 20. The temperature sensor ofclaim 19 wherein the digital signal processor stores one of thedigitized diode voltage values or the corresponding temperature valuesin the first temperature state.
 21. The temperature sensor of claim 20wherein the digital signal processor stores one of the digitized diodevoltage values or the corresponding temperature values in a secondtemperature state wherein the second current source is selectivelydecoupled to obtain voltage values in the second temperature state. 22.A method for determining an operating temperature of a heat generatingcircuit, comprising: conducting a first current level through asemiconductor device that is thermodynamically coupled to the heatgenerating circuit; detecting a first voltage drop across thesemiconductor device; conducting a second current level through thesemiconductor device that is thermodynamically coupled to the heatgenerating circuit; detecting a second voltage drop across thesemiconductor device; and determining, based upon the first and secondvoltage drops, a temperature of the heat generating circuit.
 23. Themethod of claim 22 further including selectively coupling a currentsource to an input of the semiconductor device to conduct the secondcurrent level.
 24. The method of claim 23 further including producingdigitized diode voltage values of the first and second voltage drops toa digital processor.
 25. The method of claim 14 further includingdetermining a temperature based upon the digitized diode voltage values.